Communication-concepts MPSH81 Instrukcja Użytkownika Pobierz pdf (Strona 3)

MPSH81 / MMBTH81

Typical Characteristics (continued)

PNP RF Transistor

(continued)

Input / Output Capacitance

vs Reverse Bias Voltage

-10-8-6-4-20

1

1.2

1.4

1.6

1.8

2

2.2

2.4

2.6

2.8

3

REVERSE BIAS VOLTAGE (V)

CAPACITANCE (pF)

C

ibo

f = 1.0 MHz

C

obo

Contours of Constant Gain

Bandwidth Product (f )

0.1 1 10 100

-14

-12

-10

-8

-6

-4

-2

0

I - COLLECTOR CURRENT (mA)

V - COLLECTOR VOLTAGE (V)

CE

C

-

-

-

-

T

200 MHz 500 MHz

900 MHz

200 MHz

500 MHz

1200 MHz

1500 MHz

Power Dissipation vs

Ambient Temperature

0 255075100125150

0

50

100

150

200

250

300

350

TEMPERATURE ( C)

P - POWER DISSIPATION (mW)

D

SOT-23

TO-92

°

Base-Emitter ON Voltage

vs Collector Current

0.1 1 10 100

0

0.2

0.4

0.6

0.8

1

I - COLLECTOR CURRENT (mA)

V - BASE-EMITTER ON VOLTAGE (V)

BE(ON)

C

V = 10V

CE

--

-

-

A

T = 25°C

A

T = 100°C

A

Base-Emitter Saturation

Voltage vs Collector Current

0.1 1 10 100

-1.6

-1.4

-1.2

-1

-0.8

-0.6

-0.4

I - COLLECTOR CURRENT (mA)

V - BASE-EMITTER SAT. VOLTAGE (V)

BE( SAT)

C

--

-

-

T = 55

°

C

A

-

T = 25

°

C

A

T = 125

°

C

A

I = 10 I

C

B

Collector Reverse Current

vs Ambient Temperature

25 50 75 100 125 150

0.01

0.1

1

10

100

T - AM BIENT TEMPE RATURE ( C)

I - COLLECTOR REVERSE CURRENT (nA)

CES

A

V = -6.0V

CE

V = -3.0V

CE

°

1 2 3 4 5 6 7 8 9 10 11

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